Daily Papers

The precise synchronization of distant clocks is a fundamental requirement for a wide range of applications. Here, we experimentally demonstrate a novel approach of quantum clock synchronization utilizing entangled and correlated photon pairs generated by a quantum dot at telecom wavelength. By distributing these entangled photons through a metropolitan fiber network in the Stockholm area and measuring the remote correlations, we achieve a synchronization accuracy of tens of picoseconds by leveraging the tight time correlation between the entangled photons. We show that our synchronization scheme is secure against spoofing attacks by performing a remote quantum state tomography to verify the origin of the entangled photons. We measured a distributed maximum entanglement fidelity of 0.817 pm 0.040 to the |Phi^+rangle Bell state and a concurrence of 0.660 pm 0.086. These results highlight the potential of quantum dot-generated entangled pairs as a shared resource for secure time synchronization and quantum key distribution in real-world quantum networks.

This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on semi-insulating InP:Fe substrates. The stationary growth approach enabled precise control over lateral gradients in layer strain, composition, and thickness across a single wafer, while strain-balancing facilitated pseudomorphic growth to explore a wide range of structural parameters, providing a robust platform to study their influence on photoconductive performance. Structural characterization confirmed high crystalline quality and smooth surface morphology in all samples. Time-resolved pump-probe spectroscopy revealed subpicosecond carrier lifetimes, validating the effectiveness of strain balancing and Be doping in tuning ultrafast recombination dynamics. Hall effect measurements supported by 8-band k.p modeling revealed enhanced carrier mobility in strain-balanced SLs compared to lattice-matched structures, primarily due to reduced electron and hole effective masses and stronger quantum confinement. Additionally, optical absorption under 1550 nm excitation showed improved absorption coefficients for the strain-balanced structure, consistent with the reduction in bandgap energy predicted by theoretical modeling, thereby enhancing photon-to-carrier conversion efficiency. Furthermore, transmission electron microscopy provided first-time evidence of significant Be-induced interdiffusion at the strained SL interfaces, an important factor influencing carrier transport and dynamics. These findings position low-temperature-grown Be-doped InGaAs/InAlAs strain-balanced SLs as promising materials for high-performance broadband THz photoconductive detectors operating at telecom-compatible wavelengths.