Our Products

Advanced semiconductor deposition systems designed for precision, reliability, and innovation

MOCVD Systems

MOCVD System

Precision Thin Film Growth

Our Metal Organic Chemical Vapor Deposition systems enable atomic-level control for growing high-quality 2D materials, transition metal dichalcogenides (TMDs), and advanced semiconductor films.

Multi-wafer processing capability (2" to 8")
In-situ monitoring and process control
Temperature range: 200°C to 1200°C
Ultra-high purity gas delivery system
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PVD Systems

Advanced Metallization Solutions

Our Physical Vapor Deposition systems provide exceptional film uniformity and reproducibility for BEOL applications and advanced material coatings.

Multi-target configuration (up to 8 targets)
Base pressure: 10⁻⁸ Torr
Substrate heating up to 800°C
RF/DC magnetron sputtering capability
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Accessories & Consumables

Process Kits

Customized shielding and hardware for optimized film deposition

Target Materials

High-purity sputtering targets in various materials and geometries

Gas Delivery

Precision mass flow controllers and gas handling systems

Technical Resources

Process Recipes

Optimized deposition parameters for various materials

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Maintenance Guides

Step-by-step maintenance procedures and schedules

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Troubleshooting

Common issues and solutions for deposition processes

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Technical Specifications

Parameter MOCVD Systems PVD Systems
Wafer Size 2" to 8" 2" to 8"
Base Pressure 10⁻⁶ Torr 10⁻⁸ Torr
Operating Temp 200°C - 1200°C RT - 800°C
Film Uniformity ±2% ±1%

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