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"在實驗室中，為提升測試效率，經常會採用較高的劑量率 如幾十到幾百 rad/(...TRUNCATED) | 29 | B03_Ch4-1_part2 | 27 | 56 | B03_Ch4-1_part2_0001 | [[-0.49531805515289307,-0.5573073625564575,-0.5573073625564575,-0.5573073625564575,-0.55730736255645(...TRUNCATED) | 3,000 | [50258,50364,3581,10376,24023,245,2415,97,5975,171,120,234,6344,20949,41670,9592,105,22099,43076,448(...TRUNCATED) | |
"尤其在電信技術與手機晶片領域擁有重要地位 高通的晶片多委由台積電、(...TRUNCATED) | 29 | F02_CH3 | 196 | 225 | F02_CH3_0007 | [[0.4449654817581177,0.13011705875396729,0.08080995082855225,0.056785762310028076,-0.041854143142700(...TRUNCATED) | 3,000 | [50258,50364,1530,97,9572,3581,20545,17665,32502,9890,241,34127,11389,17543,5094,114,16668,8313,246,(...TRUNCATED) | |
"目前主要的焦點是磁阻式隨機存取記憶體（MRAM）的研發，你應該知道MRAM已(...TRUNCATED) | 25.2 | D03_CH2-2 | 72.4 | 97.6 | D03_CH2-2_0003 | [[-0.6036916971206665,-0.6036916971206665,-0.6036916971206665,-0.6036916971206665,-0.603691697120666(...TRUNCATED) | 3,000 | [50258,50364,39004,13557,4275,1546,4971,99,8216,1541,163,96,223,10034,119,27584,48890,17543,39781,29(...TRUNCATED) | |
"才较容易呈现铁电性 因为等于1时可视为一个临界值 当T小于1 主要由B位八(...TRUNCATED) | 28.88 | D04_CH2 | 314.8 | 343.68 | D04_CH2_0011 | [[-0.45398879051208496,-0.5058704614639282,-0.5058704614639282,-0.5058704614639282,-0.50587046146392(...TRUNCATED) | 3,000 | [50258,50364,18888,9830,225,49212,3606,230,20204,165,241,223,42182,21686,220,34627,10187,37732,16,15(...TRUNCATED) | |
"研究薄膜的表面特性 有兩個樣品 AFM 影像分別顯示兩個不同奈米結構的薄膜(...TRUNCATED) | 30 | B01_3-2 | 314 | 344 | B01_3-2_0011 | [[-0.27655768394470215,-0.5182969570159912,-0.5182969570159912,-0.5182969570159912,-0.51829695701599(...TRUNCATED) | 3,000 | [50258,50364,23230,242,44704,27746,226,39708,250,1546,17571,8833,17682,21686,21461,34623,6180,30246,(...TRUNCATED) | |
"路介面負責將 PE 產出資料封包化（packetize），並 depacketize）以提供後續處 (...TRUNCATED) | 28.7 | A01_3-2_part2 | 186.8 | 215.5 | A01_3-2_part2_0007 | [[-0.5459306240081787,-0.5855971574783325,-0.5855971574783325,-0.5855971574783325,-0.585597157478332(...TRUNCATED) | 3,000 | [50258,50364,24658,30312,8833,11561,254,11561,105,34168,24346,220,33299,7781,35380,33404,1530,223,23(...TRUNCATED) | |
"要以晶片疊層（wafer stacking）與TSV結合為主，如 wafer-to-wafer bonding 或 chip-to-w(...TRUNCATED) | 27 | C04_CH4-2_part2 | 171.4 | 198.4 | C04_CH4-2_part2_0006 | [[-0.2770681381225586,-0.5433213710784912,-0.5433213710784912,-0.5433213710784912,-0.543321371078491(...TRUNCATED) | 3,000 | [50258,50364,4275,3588,5094,114,16668,18140,232,9636,97,171,120,230,4151,612,41376,171,120,231,34127(...TRUNCATED) | |
"如一片污染的矽晶片，可 能會看到大量氧、一 些矽與碳的信號。此 寬範圍(...TRUNCATED) | 29.12 | B01_5-1 | 256.16 | 285.28 | B01_5-1_0009 | [[-0.5077431201934814,-0.5077431201934814,-0.5077431201934814,-0.5077431201934814,-0.507743120193481(...TRUNCATED) | 3,000 | [50258,50364,8238,2257,16668,12800,94,46568,1546,5881,121,5094,114,16668,171,120,234,4429,220,8225,6(...TRUNCATED) | |
"其生產通常集中於 以先進製造能力與技術實力著稱的國家 另一個關鍵階段(...TRUNCATED) | 29 | F03_CH2-2 | 145 | 174 | F03_CH2-2_0005 | [[0.7540522217750549,0.2074097990989685,-0.240220308303833,-0.04440104961395264,-0.2512246370315552,(...TRUNCATED) | 3,000 | [50258,50364,9572,8244,33299,19550,11279,26020,5975,19488,220,3588,10108,18214,8083,121,37583,8225,1(...TRUNCATED) |
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